WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively.

As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing.

The NXP Bi-Polar Division product portfolio (Diodes, Thyristors & Transistors) has been transferred to WeEn Semiconductors (Jan 19, 2017).

NXPSC166506Q

NXPSC166506Q

WeEn Semiconductors Co., Ltd

Descripción

SILICON CARBIDE POWER DIODE

13.921

Más sobre el pedido

BYC5-600,127

BYC5-600,127

WeEn Semiconductors Co., Ltd

Descripción

DIODE GEN PURP 500V 5A TO220AC

18.067

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NXPSC06650B6J

NXPSC06650B6J

WeEn Semiconductors Co., Ltd

Descripción

DIODE SCHOTTKY 650V 6A D2PAK

14.028

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NXPSC08650X6Q

NXPSC08650X6Q

WeEn Semiconductors Co., Ltd

Descripción

DIODE SCHOTTKY 650V 8A TO220F

13.922

Más sobre el pedido

BYV79E-200,127

BYV79E-200,127

WeEn Semiconductors Co., Ltd

Descripción

DIODE GEN PURP 200V 14A TO220AC

12.313

Más sobre el pedido

WND10P08XQ

WND10P08XQ

WeEn Semiconductors Co., Ltd

Descripción

STANDARD POWER DIODE

15.863

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BYV10-600PQ

BYV10-600PQ

WeEn Semiconductors Co., Ltd

Descripción

DIODE GEN PURP 600V 10A TO220AC

14.807

Más sobre el pedido

WNSC06650T6J

WNSC06650T6J

WeEn Semiconductors Co., Ltd

Descripción

SILICON CARBIDE POWER DIODE

13.808

Más sobre el pedido

BYC8-600,127

BYC8-600,127

WeEn Semiconductors Co., Ltd

Descripción

DIODE GEN PURP 600V 8A TO220AC

15.867

Más sobre el pedido

BYC8-600P,127

BYC8-600P,127

WeEn Semiconductors Co., Ltd

Descripción

DIODE GEN PURP 600V 8A TO220AC

13.891

Más sobre el pedido

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